RECTIFIER DIODE
AR670
Repetitive voltage up to
4400
V
Mean forward current
2280
A
Surge current
22
kA
FINAL SPECIFICATION
nov 02 - ISSUE : 03
Symbol
Characteristic
Conditions
Tj
[C]
Value
Unit
BLOCKING
V
RRM
Repetitive peak reverse voltage
150
4400
V
V
RSM
Non-repetitive peak reverse voltage
150
4500
V
I
RRM
Repetitive peak reverse current
V=VRRM
150
200
mA
CONDUCTING
I
F (AV)
Mean forward current
180 sin ,50 Hz, Th=55C, double side cooled
2280
A
I
F (AV)
Mean forward current
180 sin ,50 Hz, Tc=85C, double side cooled
2220
A
I
FSM
Surge forward current
Sine wave, 10 ms
150
22
kA
I t
I t
without reverse voltage
2420 x 1E3
As
V
FM
Forward voltage
Forward current =
3000 A
25
1.50
V
V
F(TO)
Threshold voltage
150
0.80
V
r
F
Forward slope resistance
150
0.210
mohm
SWITCHING
t rr
Reverse recovery time
s
Q rr
Reverse recovery charge
150
C
I rr
Peak reverse recovery current
A
MOUNTING
R
th(j-h)
Thermal impedance, DC
Junction to heatsink, double side cooled
21
C/kW
R
th(c-h)
Thermal impedance
Case to heatsink, double side cooled
6
C/kW
T
j
Operating junction temperature
-30 / 150
C
F
Mounting force
22.0
/ 24.5
kN
Mass
500
g
ORDERING INFORMATION : AR670 S 44
standard specification
VRRM/100
POSEICO SPA
Via N. Lorenzi 8, 16152 Genova - ITALY
Tel. ++ 39 010 6556234 - Fax ++ 39 010 6557519
Sales Office:
Tel. ++ 39 010 6556775 - Fax ++ 39 010 6442510
POSEICO SPA
POwer SEmiconductors Italian COrporation
POSEICO
AR670 RECTIFIER DIODE
FINAL SPECIFICATION nov 02 - ISSUE : 03
DISSIPATION CHARACTERISTICS
SQUARE WAVE
DC
180
120
90
60
30
0
500
1000
1500
2000
2500
3000
3500
4000
4500
5000
0
500
1000
1500
2000
2500
3000
3500
I
F(AV)
[A]
P
F(AV)
[W]
DC
120
90
60
30
50
60
70
80
90
100
110
120
130
140
150
0
500
1000
1500
2000
2500
3000
3500
I
F(AV)
[A]
Th [C]
180
POSEICO SPA
POwer SEmiconductors Italian COrporation
POSEICO
AR670 RECTIFIER DIODE
FINAL SPECIFICATION nov 02 - ISSUE : 03
DISSIPATION CHARACTERISTICS
SINE WAVE
180
120
90
60
0
500
1000
1500
2000
2500
3000
3500
4000
4500
5000
0
500
1000
1500
2000
2500
3000
3500
I
F(AV)
[A]
P
F(AV)
[W]
30
180
120
90
60
30
50
70
90
110
130
150
170
0
500
1000
1500
2000
2500
3000
3500
I
F(AV)
[A]
Th [C]
POSEICO SPA
POwer SEmiconductors Italian COrporation
POSEICO
AR670 RECTIFIER DIODE
FINAL SPECIFICATION nov 02 - ISSUE : 03
Distributed by
FORWARD CHARACTERISTIC
Tj = 150 C
0
1000
2000
3000
4000
5000
6000
7000
0.6
1.1
1.6
2.1
2.6
Forward Voltage [V]
Forward Current [A]
TRANSIENT THERMAL IMPEDANCE
DOUBLE SIDE COOLED
0.0
5.0
10.0
15.0
20.0
25.0
0.001
0.01
0.1
1
10
100
t[s]
Zth j-h [C/kW]
SURGE CHARACTERISTIC
Tj = 150 C
0
5
10
15
20
25
1
10
100
n cycles
ITSM [kA]
All the characteristics given in this data sheet are guaranteed only with uniform
clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm
and roughness < 2 m.
In the interest of product improvement POSEICO SpA reserves the right to change
any data given in this data sheet at any time without previous notice.
If not stated otherwise the maximum value of ratings (simbols over shaded
background) and characteristics is reported.
POSEICO SPA
POwer SEmiconductors Italian COrporation
POSEICO
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